Technical Details

• Part Status Obsolete
• Transistor Type NPN
• Voltage - Collector Emitter Breakdown (Max) 12V
• Frequency - Transition 9GHz
• Noise Figure (dB Typ @ f) 1.9dB ~ 3dB @ 2GHz ~ 4GHz
• Gain 10.5dB ~ 14dB
• Power - Max 600mW
• DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 35mA, 8V
• Current - Collector (Ic) (Max) 80mA
• Operating Temperature 200°C (TJ)
• Mounting Type Surface Mount
• Package / Case Die
• Supplier Device Package Chip