Technical Details

• Part Status Active
• Technology MOSFET (Metal Oxide)
• Configuration 2 N-Channel (Dual) Common Source
• FET Feature -
• Drain to Source Voltage (Vdss) 30V
• Current - Continuous Drain (Id) @ 25°C 10A (Ta)
• Rds On (Max) @ Id, Vgs 13.5mOhm @ 6A, 10V
• Vgs(th) (Max) @ Id 2.1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs 17.4nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds 1020pF @ 15V
• Power - Max 15.6W
• Operating Temperature -55°C ~ 150°C (TJ)
• Mounting Type Surface Mount
• Package / Case 8-PowerVDFN
• Supplier Device Package 8-VSON (3.3x3.3)